Electron tunnelling of GaAs-Pb junctions under high pressure
نویسندگان
چکیده
2014 The conduction band distortion and LO phonon energy of GaAs, the transition temperature, the energy gap and the phonon energies in superconducting lead film, have been measured at pressures up to 30 kbar by electron tunnelling through Schottky barriers. LE JOURNAL DE PHYSIQUE LETTRES TOME 39, 15 NOVEMBRE 1978,
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تاریخ انتشار 2016